Equipment

INL relies on a high-tech research environment formed by state-of-the-art and instrumentation. Its 22.000 square meters of research area is equipped with the latest technologies to address the major challenges in nanofabrication nanocharacterization and other Nanotechnologies applied to environmental & food control, Nanomedicine and nanoelectronics.

• Wet and Dry PI Laboratories
• Cleanroom
• High Accuracy Laboratories
• Biochemistry Facility & Support Labs

Electron Beam Lithography

The electron-beam lithography system is designed for high resolution fabrication and placement of patterns written directly on substrates up to 200mm. The system is also very capable of writing optical masks for contact and projection lithography. It allows exposure of structures with minimum dimensions below 10nm, on Si and other substrates (glass, SiO2) with High current density Thermal Field Emission gun for operation at 20, 50 and 100 kV.

High-resolution SEM for Critical Dimension

Scanning electron microscopy will be installed during the second semester of 2011

Direct Write Laser Lithography System

The DWL2000 is a high resolution, laser-based maskless optical lithography system. It has the capability of exposing at two different wavelengths: 405nm and 375nm, with digital design information on 25nm writeable address grid. It writes directly on photoresist-coated quartz or sodalime mask blanks as well as on wafers as large as 200mm. The maximum speed is 105 mm^2 per minute, with a 700nm minimum structure size. It has the option to autofocus either pneumatically or optically, with programmable scripts for automatic measurements of critical dimensions. The DWL is mainly used for research and development of new designs as well as for production of masks to be used by other systems such as steppers and mask aligners.

Mask Aligner

Mask aligners are used to transfer masks onto substrates coated with photoresist. It is a high resolution contact mask aligner, with sub-micron feature capability in positive tone resists. In addition to the highly accurate top-side alignment capability, it can perform bottom-side alignment with the use of a second alignment microscope, offering superior performance to IR-based systems used elsewhere for backside alignment. The versatile mask holder allows both round and square plates as masks, and the sample plate accommodates small and odd-shaped substrates.

Coater/Developer Track

The cluster tracks enable automatic spin coating and develop process of up to 200 mm wafers for multi-layer and thick resist coating. There are two separate tracks, one for optical resist and a second one for electronbeam resists. Both systems include a submicron Coater module with pivoting dispense arm, top and bottom EBR, puddle and spray development chamber, programmable exhaust flow controller, temperature controlled lines, and drain full sensor. These systems are capable of processing up to 25 wafers in one batch.

HMDS Priming and Image Reversal Oven

HDMS Priming allows maximum adhesion of Photoresist over wafer surface and the reversal Oven creates an undercut profile in the photoresist for liftoff processing by NH3 (ammonia) gas.

Wet Benches and Fume Hoods

Wet Benches are stations for wet etching and cleaning of wafers and devices. The various wet benches differ in the specific process modules available and the materials allowed at each station. INL is equipped with Wet benches for post lithography steps such as resist stripping, lift-off, metal and oxide etching.

Chemical Mechanical Polishing and Planarization Tool

Chemical mechanical planarization is a process that can smoothen topography or various materials It is used to planarize oxide, poly silicon or metal layers in order to prepare them for post-lithographic steps, avoiding depth focus problems during illumination of photosensitive layers. The tool includes a two-carrier system for polishing and planarizing single wafers with diameters up to 200mm as well as for coupons and part wafers (irregular-shaped samples).

Multi-target physical vapor deposition cluster tool

The Multi-target physical vapor deposition cluster tool is especially designed for deposition of ultra–thin films, magnetic films, high–quality metallic, conductive and insulating films and multiple film stack deposition comprising these materials without the need to break ultra-high vacuum. The system is a UHV single wafer cluster tool and consists of one transport module, one multi-target PVD module and one soft etch/ oxidation module. It is capable of depositing different magnetic and non–magnetic layers on wafers with diameters up to 200mm by DC/RF Magnetron Sputtering (or Ion Beam Sputtering), with good uniformity for the deposited stacks.

Chemical Vapor Deposition for Carbon Nanotubes and Nanowires

A dedicated CVD equipment for carbon nanotube growth on wafers with process flexibility to grow various aspect ratios for applications such as field emission sources, bio sensors and microfluidics among others.This Nanoscale Growth System delivers high performance growth of nanotubes and nanowires with in-situ catalyst activation and rigorous process control with flexible temperature up to 700°C.

Plasma-Enhanced Chemical Vapor Deposition Tool for SiO2 or SiNx

Tool dedicated to silicon oxide and silicon nitride deposition by Plasma Enhanced Chemical Vapour Deposition (PECVD). It has a single wafer processing chamber and dual high/low frequency RF options. It uses a plasma to enhance the chemical reaction rates of the precursors, which allows deposition of thin films at lower temperatures (typically<350°C) than conventional CVD systems.

Physical Vapor Deposition Tool for metallization and passivation

A system for rapid physical vapour deposition, by DC/RF Magnetron Sputtering. This cluster tool consists of a central dealer, a 200 mm-cassette load lock, a soft-etch module, a three-target linear module (AlSiCu, TiN, SiO2 or AlOx) with two DC and one RF sources, and a soft etch module.

Reactive Ion Etching System for SiO2 and SiNx

A system for Reactive Ion Etching consisting of a load lock for 200mm diameter wafers and a process chamber for anisotropic etching of silicon oxide, silicon nitride, polysilicon, and other materials such as amorphous Si, using a plasma source and fluorine chemistry. The process chamber is of metallic construction and is heated to reduce the level of deposition on it. The system has an optimised geometry to improve plasma confinement, which further increases the plasma density above the wafer and also hinders undesirable deposition inside the chamber.

Reactive Ion Etching System for AlSiCu and TiN

A system for reactive ion etching consisting of a load lock for 200mm wafers and a process chamber for anisotropic etching of AlSiCu and TiN, using an Inductively Coupled Plasma (ICP) and chlorine based chemistry. The ICP process module delivers high density plasma using a conventional radial ICP coil design that ensures uniform plasma. Through the use of a low-pressure operating window, anisotropic profiles can be achieved. The control of ion bombardment at the wafer surface by varying the bias power ensures low damage and a controllable etch process.

Ion Milling System

A system for material removal by ion milling which includes a load lock for single wafer loading or for cassettes of 200mm wafers and a process chamber. It is an advanced automatic vacuum coating system designed for the deposition of dielectric and metallic films. The unique system provides excellent geometry within wafer non-uniformity of material deposition on substrates up to 200 mm.

UHV PVD Deposition System with Magnetrons in Confocal geometry

A multi-target UHV sputtering system consisting of a deposition chamber with 11 2” diameter magnetrons in confocal geometry for the co-deposition of materials, optimized wafers of up to 200m in diameter.

Deep Si-Etching System

The Deep Si-Etching System uses the Bosch process to cut deep, high aspect ratio channels in silicon. The system consists of a single wafer load lock and a process chamber for the anisotropic etching of Si trenches and through wafer vias. Used primarily for MEMs devices, common materials uses in this etcher are silicon wafers, photoresist and thin films of silicon dioxide and silicon nitride. This ICP System uses fluorine-based gases for anisotropic deep silicon trench etching. The 13.56 MHz RF system produces a high-density, low-pressure, low-energy inductively coupled plasma. This type of plasma allows high selectivity and aspect ratio etching for depths greater than 250 microns.

X-Ray Photoelectron Spectroscopy

An analytical X-Ray Photoelectron Spectroscopy (XPS) system with multi-technique capability (AES/SAM/ISS/REELS) able to produce chemical maps with lateral resolution of <10 µm (or < 20 µm for small area analysis). Instrument to be installed during the second semester of 2011.

Dual FIB with SEM

Workstation combining Scanning Electron Microscope and Focused Ion Beam for nanoprototyping, nano-machining, nano-analysis and advanced sample preparation. Simultaneously images are achieved with the electron beam at ultra-high resolution using a Schottky field emitter while at the same time thinning with the ion beam using a liquid Gallium ion emitter. Instrument to be installed during the second semester of 2011

X-Ray Photoelectron Spectroscopy

An analytical X-Ray Photoelectron Spectroscopy (XPS) system with multi-technique capability (AES/SAM/ISS/REELS) able to produce chemical maps with lateral resolution of <10 μm (or < 20 μm for small area analysis). Instrument to be installed during the second semester of 2011

XRD Diffractometer

An X-Ray Diffractometer, a non-destructive technique used for analytical tasks such as grazing incidence, in-plane diffraction, reciprocal space mapping, reflectometry, and small-angle scattering for thin film research; studying layer thickness, lattice constants, lattice mismatch, periodicity, mosaic spreads, lattice stress and strain, composition, etc. Applications include optics, nanotechnology storage media, polymers, metals, minerals, catalysts, plastics, pharmaceuticals, thin-film coatings, ceramics, and semiconductors. Instrument to be installed during the second semester of 2011.

Dimension Icon Atomic Force Microscope

The dimension icon AFM system has been designed from top to bottom to deliver the revolutionary low drift and low noise that allows users to achieve artifact-free high-quality images in minutes. The Dimension Icon AFM is equipped with proprietary ScanAsyst™ automatic image optimization technology, which enables easier, faster, and more consistent results. With the NanoScope V Controller, the Dimension Icon is able to display and capture up to eight images simultaneously with a signal-to-noise ratio. This fifth-generation controller delivers high-speed data capture and high-pixel-density images (5120 x 5120) in eight channels simultaneously, allowing researchers to record and analyze tip-sample interactions that probe nanoscale events at time scales.

Spectroscopic Ellipsometer

A tool to perform non-destructive optical ellipsometry for determining film thickness and optical properties, such as index of refraction (n) and extinction coefficient (k), capable of a 100mm diameter inspection area but with a stage for 200mm wafers. Spectroscopic Ellipsometer includes: Laser 532 nm, 15 mW, Spectroscopic Box with fiber coupling, Xe Arc lamp and 46 filters, motorised goniometer. Allows: analysis with high accuracy and precision, analysis of multilayer/ multi parameter systems, to choose a proper wavelength for absorbing materials, optimised sensitivity by wavelength tuning.

Contact Profilometer

The contact profilometer is a surface metrology analysis tool which provides stylus profiling analysis of surface topography. The tool is capable of performing automated step height analysis, surface contour measurements, waviness and roughness measurement with detailed 2D or 3D analysis of topography for a variety of surfaces and materials.

Four-Probe Tester

A four-probe tester, automatic system to measure Sheet Resistance and Resistivity of wafers, up to 200mm in diameter. The tool contains data analysis functions such as: Data Map, 3D Contour Maps, Diameter Scan, Trend Analysis, etc. Measurements range from 1mΩ/sq to 2MOhm/sq, resistivity between 10μΩ.cm to 200 kΩ.cm and the electronic accuracy remains in 0.5% for V/I.

Life Science Microscope

Microscope offering highly automated fluorescence imaging and a variety of contrast enhancing techniques for transmitted light imaging of living biological specimens. Inverted wide-field microscope upgradable for total internal reflection fluorescence microscopy (TIRFM) with image capture provided by an electron multiplying charged coupled device (emCCD). Instrument to be installed during the second semester of 2011

Semi automatic Probe Station

A semi-automatic wafer probe station used to automatically gather electrical characterisation data of devices at wafer level. This tool is useful to extract statistically meaningful data concerning key device parameters and microfabrication process dependent deviations. Features and benefits : • Precise 200mm probe system, with pre-programmed test sequences. • Sub-micron probing capability. • Die-to-die stepping time of under 100ms. • Able to probe up to 20 die/sec.

Magnetoresistive Tester

A prober used to extract TMR and RxA from bulk magnetic tunnel junction stacks, using a current-in-plane TMR measurement. The MTJ stack surface is contacted by a set of 12 cantilever electrodes with a variable spacing, down to 750nm. Features and benefits : • Capability to measure the TMR of unpatterned MTJ stacks with an RxA down to 0.1 Ohm um2. • Capable of measuring the TMR in MTJs with both in-plane and perpendicular anisotropy. • In plane field up to 2500 Oe and perpendicular field up to 1400 Oe

Vibrating Sample Magnetometer

Vibrating Sample Magnetometer system can measure samples with extremely low magnetic signals (5x10-7 emu) and/or very low coercivities (10mOe) in fields up to 2T. The system supports all known types of magnetic measurements such as Hysteresis and minor loops, IRM and DCD Remanence Loops, SFD, Delta M, Delta H and Henkel Plots, as well as Angular and AC Remanence Loops, Temperature scans, and Time-decay measurements. It can perform measurements at low fields, with a H resolution of 0.01 Oe. Possibility of automatic sample handling, with up to 90 samples.

SQUID

This SQUID based magnetometry system allows magnetic moment measurements with a sensitivity down to 1x10-8 emu (low fields), in a temperature range from 1.8K to 400K, and under a magnetic field ranging up to ±70 kOe. The main module is liquid Helium-free, meaning that it works using a closed-cycle refrigeration system able to provide the initial liquid He required for cool down from a gas source, and to maintain the system operational at the required temperature and fi eld ranges.

Magnetic Annealing Set-up

A set-up for the annealing of samples up to 400°C, under controlled magnetic fields and environment, in fields up to 1 to 2 T, in Ar or vacuum, with programmable temperature ramps and cool downs. The system can handle from wafer fragments to 200mm wafers and is capable of applying the magnetic field either in plane or perpendicular to the plane of the wafer.