Al (TiW) Reactive Ion Etching

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SPTS ICP - A system for reactive ion etching consisting of a load lock for 200mm wafers and a process chamber for anisotropic etching of AlSiCu and TiN, using an Inductively Coupled Plasma (ICP) and chlorine based chemistry. The ICP process module delivers high density plasma using a conventional radial ICP coil design that ensures uniform plasma. Through the use of a low-pressure operating window, anisotropic profiles can be achieved. The control of ion bombardment at the wafer surface by varying the bias power ensures low damage and a controllable etch process.

Available for external use

Associated technology




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