Si Deep Reactive Ion EtchingAmpliar
SPTS Pegasus - The Deep Si-Etching System uses the Bosch process to cut deep, high aspect ratio channels in silicon. The system consists of a single wafer load lock and a process chamber for the anisotropic etching of Si trenches and through wafer vias. Used primarily for MEMs devices, common materials uses in this etcher are silicon wafers, photoresist and thin films of silicon dioxide and silicon nitride.
This ICP System uses fluorine-based gases for anisotropic deep silicon trench etching. The 13.56 MHz RF system produces a high-density, low-pressure, low-energy inductively coupled plasma. This type of plasma allows high selectivity and aspect ratio etching for depths greater than 250 microns.