INL news


Published 16-02-2012

The Director General of the International Iberian Nanotechnology Laboratory (INL), José Rivas, was pleased with the interest shown by the Finish academic and industrial institutions visited during the stay organized by the President of the Republic of Portugal, Aníbal Cavaco Silva, to Helsinki, last week. Erkki Ormala, Vice-President for Business Environment at Nokia, one of the world leaders in communication technologies, showed interest in visiting the International Iberian Nanotechnology Laboratory, with its headquarters in Braga. The future visit of Nokia representatives will allow establish...

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INL installs LPX Pegasus ASE, a Deep Silicon Etch (DRIE) with a broad range of challenging applications

Published 25-05-2011

Advanced Silicon Etch (ASE) is a deep reactive ion etching (DRIE) technique used to rapidly etch deep and high aspect ratio structures in silicon.

LPX Pegasus is the continuation of STS’ Advanced Silicon Etch (ASE) technology. Through an in-depth understanding of the Bosch process and with the required hardware, Pegasus is able to provide excellent profile control and selectivity. The increased etch rate and improved uniformity lead to higher throughput and device yield, resulting in increased productivity.

This inductively de-coupled plasma (IDP) system uses fluorine-based gases for an...

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INL project presented in Mexico during NanoMex’10

Published 26-11-2010

In pursue of INL’s outreach program, Jose Rivas, Director General (DG) of the INL, attended the“Simposio: Nanociencias y Nanotecnología” at UAM in Mexico City, 15-16 November and the NanoMex’10 which is the Third International and Interdisciplinary Nanoscience and Nanotechnology Meeting , organized by the National Autonomous University of Mexico  (UNAM), in Cuernavaca City (Morelos) 17-19 November . In this meeting the DG of the INL made the most of the encounters to present the INL and to contact leading important Mexican scientists in the field of Nanotechnology .


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