Nanoelectronics Light Emitting Diodes with Active Layers Composed by Quantized Materials
Thin film light-emitting devices (LEDs) have the potential to significantly change both the lighting and display industries, owing to their ability to adapt to various form factors without having to sacrifice high device efficiency. As new candidates to the thin film LED family, quantized materials (QM), namely quantum dot (QD, 2-20 nm) and metal nanocluster (MNC, ˂2 nm), have many advantages over molecular emitters (organic LED) such as narrow, highly saturated, and tunable emission color depending on the degree of control over size dispersion and choice of core and shell materials. However, little is known about their optical or electronic properties in dense thin films (especially for MNC).
This project will be developed in three aspects. At first, the size, material as well as the synthesis methods of the core/shell compounds will be studied in order to obtain a high quantum yield (QY) of these quantized materials. Then, with the help of cyclic voltammetry (CV), absorption, photoluminescence, etc. measurements, a well-defined thin film QM-LED structure can be confirmed to have a high injection efficiency for both electron and hole. Finally, with the improvement of the QM-LEDs properties (external quantum efficiency, brightness, spectral width, etc.), we can find their applications in versatile fields such as general lighting, display, communication, sensing and detecting.