Nanoelectronics Hybrid Spintronics-CMOS Devices
We will be aiming at integrating MTJ cells with CMOS designs for three types of devices:
• Reconfigurable logic cells with MTJs as a non-volatile memory element
• Hybrid spintronics-CMOS oscillators
• Smart Magnetometers
MRAM devices using MTJs cells have been available for a while. However, its use has been limited to the low bit density that cannot be improved until currents are not decreased down to 1E5 A/cm2. We will focus the research on the design of MRAM cells using MTJ technology to allow run-time reconfigurable hardware with access speeds comparable to those of SRAM.
The hybrid spintronics-CMOS oscillator is a device that makes use of a spin transfer torque magnectic nano-oscillator to perform injection locking on RF oscillators. We will focus our research in the design of a CMOS RC oscillator capable of handling the high-frequency characteristics of magnetic nano-oscillators within a reduced area and low power features. We expect to have a current and field controlled oscillation frequency in the range of 1-10GHz, large agility allowing changes of 85% in frequency over just 10 oscillations, and Q factors above 100 in the Gigaherts range. The aim in combining magneto-oscillators with a CMOS RC oscillator will allow us to overcome limitation of both structures when standalone like the low output level of magneto nano-oscillator and low Q factor in RC oscillator. Research will target to design an hybrid structure with a frequency of 10GHz and a tunable range of 1-1 GHz.
Smart Magnetometers are circuits where the MTJ sensor is integrated with the electronics circuits required for biasing the sensor and converting the output voltage in a quantity related to the context where the sensor is being used. The research in this area will be aim at design a combination of CMOS circuits and MTJs sensor that serve specifically an end application. This would require a reusable and flexible design to accommodate with slight changes different end applications