Nanomachines & Nanomanipulation Dopant distribution and Oxygen vacancy mapping in doped oxides

This project aims at the quantitative characterization of doped oxide nanocrystals, typically Gd-doped CeO2, Sb-doped SnO2 and F-doped SnO2, with the main goal of detecting dopant atoms segregation and determining the equilibrium concentration of O vacancies. Typical microscopy approaches used in such projects are aberration-corrected HRTEM, high resolution EELS and XEDS spectroscopies, and atomic scale modeling and multislice image calculation. 

The motivation behind the studies pertaining to this project is the impact of the dopant localization and the O defects concentration on fundamental characteristics of doped oxide nanomaterials. We believe that measuring such properties accurately is an essential step to improve the characteristics of these materials, and that lead to enhanced performance a variety of applications, such as ionic conductors on fuel cells. This project represents a collaboration with Forschungszentrum Jülich (Germany) and LIEC-UFSCar (Brazil).