Nanoelectronics Thin Film Devices

The research activities in our group are divided between two main areas: thin film silicon devices and graphene devices. Within the first, we want to pursue the work on flexible piezoresistive strain sensors and solar cells; as for graphene we want to develop plasmonic devices that are excited using teraherz radiation and may form the basis of a new type of biosensors. We want to extend the research to other 2D materials, like hexagonal boron nitride (h-BN) and molybdenum di-sulfide and explore new routes that may open by combining them with graphene. We continue working on silicon nitride flexible multilayers for encapsulation of organic electronic devices.  We will develop some workhorse devices that will be ready for integration in other platforms, like pin Si thin film photodetectors and zinc oxide TFTs.


                                    Nirton Vieira (former member of the group), George Junior, Pedro Alpuim, Fatima Cerqueira and Jérôme Borme


Group manager Pedro Alpuim