Nanoelectronics Theory of Nanostructures

The Group of Theory of Nanostructures explores new physical phenomena at the nanoscale with potential applications in useful nanoelectronic devices. A significant part of our effort is devoted to the study of spin related effects at the nanoscale, or nanospintronics. Broadly speaking, our quest has two complementary approaches. One one side we are exploring conventional nanostructures, like quantum dots and wires, made of unconventional (from the massive application point of view) materials like graphene, topological insulators and magnetic semiconductors. On the other side, we are looking at the ultimate limit of miniaturization, single atom devices, of conventional systems, like Silicon nanotransitors.




J. L. Lado, J. Fernández-Rossier
Magnetic edge anisotropy in graphene-like honeycomb crystals
Physical Review Letters 113, 027203 (2014)
A. Spinelli, B. Bryant, F. Delgado, J. Fernández-Rossier, A. F. Otte, 
Imaging of spin waves in atomically designed nanomagnets
Nature Materials, published online on July 6 (2014). doi:10.1038/nmat4018 
A. Roldán,  M. J. Santander, A. S. Núñez,  J. Fernández-Rossier
Quantum theory of spin waves in finite chiral spin chains
Phys. Rev. B89, 054403 (2014)
J. Oberg, R. Calvo, F. Delgado, D. Jacob,  M. Moro, D. Serrate,  J. Fernández-Rossier, C. Hirjibehedin
Control of single spin magnetic anisotropy by exchange interaction
Nature Nanotechnology 9, 64 (2014)
K. Kosmider, J. W. González, J. Fernández-Rossier
Large spin splitting in the conduction band of transition metal dichalcogenide monolayers
Physical Review B88, 245436 (2013)
F. Delgado, C. D. Batista, J. Fernández-Rossier
Local probe of fractional edge states of S=1 Heisenberg spin chains
Phys. Rev. Lett. 111, 167201 (2013)
S. Fratini, D. Gosálbez, P. Merodio-Camara, J. Fernández-Rossier
Anisotropic intrinsic spin relaxation in graphene
Phys. Rev. B88, 115426 (2013)
J. L. Lado, J. W. González, J. Fernández-Rossier,
Quantum Hall effect in gapped graphene heterojunctions
Phys. Rev. B88, 035448 (2013)
J. Fernandez-Rossier,
Single atom devices: Quantum Engineering
Nature Materials 12, 480 (2013)
C. Sabater, D. Gosálbez, J. Fernandéz-Rossier, J. G. Rodrigo, C. Untiedt and J. J. Palacios
Topologically Protected Quantum Transport in Locally Exfoliated Bismuth at Room Temperature
Phys. Rev. Lett. 110, 176802 (2013)
K. Kosmider, J. Fernández-Rossier
Electronic properties of the MoS2 heterojunction
Phys. Rev. B 87, 075451 (2013)
J. W. González, F. Delgado, J. Fernández-Rossier
Graphene Single electron Transistor as a spin sensor for magnetic adsorbates
Phys. Rev. B87, 085433 (2013)
F. Delgado, K. López, R. Ferreira, J. Fernandez-Rossier
Intrinsic spin noise in Mg0 magnetic tunnel junctions
Applied Physics Letters 102, 063102
L. Besombes,  C. Cao, S. Jamet, H. Boukari, J. Fernández-Rossier
Optical control of the spin state of two Mn atoms in a quantum dot
Physical Review B 86, 165306 (2012)
J. W. González,  J. Fernández-Rossier
Impurity states in the quantum spin Hall phase in graphene
Physical Review B 86, 115327 (2012)
F. Delgado, R. Aguado, J. Fernández-Rossier
Probing a single nuclear spin on a Silicon Single Electron Transistor
Appl. Phys. Lett. 104, 072407 (2012)
D. Soriano,  J. Fernández-Rossier
Interplay between sublattice and spin symmetry breaking in graphene
Phys. Rev. B  85, 195433 (2012)
D. Gosálbez, D. Soriano, J. J. Palacios,  J. Fernández-Rossier
Spin filtered edge states in graphene
Solid State Communications 152, 1469 (2012)
F. Delgado,  J. Fernández-Rossier
Storage of classical bits in quantum spins
Phys. Rev. Lett. 108, 196602 (2012)
A. S. Núñez, J. Fernández-Rossier
Colossal Magnetic Anisotropy in Diluted Magnetic Topological Insulators
Solid State Communications 152, 403 (2012)

Former Group Members


  • Jhon W. González, now at Center of Materials Physics, San Sebastian, Spain
  • Krzysztof Kosmider, now at Universidad Autónoma de Madrid, Spain


Group manager Joaquín Fernández-Rossier