Mohamed Melboubarik - 2 copy

 

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Mohamed Belmoubarik

Research Engineer
Micro and Nanofabrication Facility

Mohamed joined INL (Dec. 2017) as a Research Engineer in Nanodevices Group and is focusing on the mass production and improvement of high-quality magnetoresistive sensors for automobiles applications using state-of-the-art micro-and nanofabrication facilities of INL.

After getting bachelor and master’s degrees (2006, 2008) in applied physics and electronic engineering from Tohoku University, Japan (thesis title: Photo-response in inter-subband of epitaxial ZnO-based Quantum wells), Mohamed joined NEC Corporation (2008-2010) as a hardware test engineer for 2.5 years; and participated in the development of multi-function printers (Multina-XF). Following his success in getting an individual research fund from the “Japan Society for the Promotion of Science” (known as JSPS), he accomplished his Ph. D thesis (Oct. 2010 – Sept. 2014) at Tohoku University, when he investigated about “Multi-states wurtzite-MgZnO based magnetic tunnel junctions (MTJ) devices for high-density magnetic storage”. Then, he continued his academic research on the topic of: “Electric-field control of wurtzite-barriers based MTJ for low energy consumption” as a postdoctoral fellow at Tohoku University in collaboration with Kanazawa University, Japan.

During the period between April 2015 and November 2017, he joined the National Institute for Materials Sciences (NIMS) as an R&D researcher for the Japanese governmental project called “ImPACT” empowering industry-oriented high-risk research and got an extensive experience in the topic of “Developing novel tunnel-barriers materials in perpendicular-MTJ devices for electrically controllable and highly dense MRAMs” in collaboration with many leading corporations and research institutes in the magnetic storage Asian market.

Selected Publications