Micro and Nanofabrication Facility
Mohamed joined INL (Dec. 2017) as a Research Engineer in Nanodevices Group and is focusing on the mass production and improvement of high-quality magnetoresistive sensors for automobiles applications using state-of-the-art micro-and nanofabrication facilities of INL.
After getting bachelor and master’s degrees (2006, 2008) in applied physics and electronic engineering from Tohoku University, Japan (thesis title: Photo-response in inter-subband of epitaxial ZnO-based Quantum wells), Mohamed joined NEC Corporation (2008-2010) as a hardware test engineer for 2.5 years; and participated in the development of multi-function printers (Multina-XF). Following his success in getting an individual research fund from the “Japan Society for the Promotion of Science” (known as JSPS), he accomplished his Ph. D thesis (Oct. 2010 – Sept. 2014) at Tohoku University, when he investigated about “Multi-states wurtzite-MgZnO based magnetic tunnel junctions (MTJ) devices for high-density magnetic storage”. Then, he continued his academic research on the topic of: “Electric-field control of wurtzite-barriers based MTJ for low energy consumption” as a postdoctoral fellow at Tohoku University in collaboration with Kanazawa University, Japan.
During the period between April 2015 and November 2017, he joined the National Institute for Materials Sciences (NIMS) as an R&D researcher for the Japanese governmental project called “ImPACT” empowering industry-oriented high-risk research and got an extensive experience in the topic of “Developing novel tunnel-barriers materials in perpendicular-MTJ devices for electrically controllable and highly dense MRAMs” in collaboration with many leading corporations and research institutes in the magnetic storage Asian market.
- Mohamed Belmoubarik, Muftah Al-Mahdawi, Masao Obata, Daiki Yoshikawa, Hideyuki Sato, Tomohiro Nozaki, Tatsuki Oda, and Masashi Sahashi
Large nonvolatile control of interfacial magnetic anisotropy in CoPt by a ferroelectric ZnO-based tunneling barrier
Physical Review B 100 (5), 054423 (2019)
- Qingyi Xiang, Hiroaki Sukegawa, Mohamed Belmoubarik, Muftah Al‐Mahdawi, Thomas Scheike, Shinya Kasai, Yoshio Miura and Seiji Mitani
Realizing Room‐Temperature Resonant Tunnel Magnetoresistance in Cr/Fe/MgAl2O4 Quasi‐Quantum Well Structures
Advanced Science 6 (20), 1901438 (2019)
- H. Sukegawa, Y. Kato, M. Belmoubarik, T. Ohkubo, S. Mitani, and K. Hono
MgGa2O4 spinel barrier for magnetic tunnel junctions: coherent tunneling and low barrier height
Applied Physics Letters, Vol. 110 (12), pp. 122404, (2017)
- M. Belmoubarik, H. Sukegawa, T. Ohkubo, S. Mitani, and K. Hono
MgAl2O4 (001) based magnetic tunnel junctions made by direct sputtering of a sintered spinel target
Applied Physics Letters, Vol. 108 (13), pp. 132404, (2016). (DOI: 10.1063/1.4945049) [selected as “EDITOR’S PICKS”]
- M. Belmoubarik, M. Al-Mahdawi, H. Sato, T. Nozaki, and M. Sahashi
Tunnel Electroresistance in Epitaxial Wurtzite-MgZnO Barrier Based Tunnel Junctions
Applied Physics Letters, Vol. 109 (17), pp. 173507, (2016)