Paulo joined INL in January 2018 and he is currently a Research Engineer in the Micro and Nanofabrication Facility, under the supervision of Margaret Costa. He works on the large scale microfabrication and characterization of magnetic field sensors based on magnetic tunnel junction technology. Also, he is a tool responsible for both Timaris sputtering systems inside the cleanroom.

Paulo obtained his MSc in Physics Engineering from Instituto Superior Técnico in 2014 where worked at INESC-MN on the development of magnetic flux concentrators with a gap size below 1um coupled to nanometric spin valve sensors. In 2018, he obtained his PhD in Physics from the Université Grenoble-Alpes (France) where he studied and developed double barrier magnetic tunnel junctions with in-plane and out-of-plane anisotropy for magnetoresistive random access memories controlled by spin-transfer torque (STT-MRAM) at SPINTEC labs (CEA Grenoble). His research was dedicated to the study of the interplay between in-plane and out-of-plane torques in double magnetic tunnel junctions with in-plane magnetization. Besides, he demonstrated the modulation of spin-transfer torque in sub-300nm perpendicular double magnetic tunnel junctions for improved read and write operations in STT-MRAM. He holds a patent for the development of a seedless multilayer with enhanced perpendicular anisotropy to be used as top reference in perpendicular magnetic tunnel junctions.

• Coelho, P., Leitao, D.C., Antunes, J., Cardoso, S. and Freitas, P.P., (2014)
  Spin valve devices with synthetic-ferrimagnet free-layer displaying enhanced sensitivity for nanometric sensors
  IEEE Transactions on Magnetics, 50(11), pp.1-4

• Leitao, D.C., Coelho, P., Borme, J., Knudde, S., Cardoso, S. and Freitas, P.P., (2015)
  Ultra-Compact 100× 100 μm2 Footprint Hybrid Device with Spin-Valve Nanosensors
  JSensors, 15(12), pp.30311-30318

• Chatterjee, J., Auffret, S., Sousa, R., Coelho, P., Prejbeanu, I.L. and Dieny, B., (2018)
  Novel multifunctional RKKY coupling layer for ultrathin perpendicular synthetic antiferromagnet
  Scientific reports, 8(1), p.11724

• Chatterjee, J., COELHO, P. V., Dieny, B., Sousa, R., & Prejbeanu, L. (2021)
  Magnetic stack, multilayer, tunnel junction, memory point and sensor comprising such a stack
  U.S. Patent No. 10,978,234. Washington, DC: U.S. Patent and Trademark Office