Sai Krishna Narayananellore
Research Engineer

Sai Krishna Narayananellore joined INL (Sep. 2019) as a Research Engineer in Spintronics Group, Dept. of Nanoelectronics Engineering, under Ricardo Ferreira’s supervision.

He completed his Master of Science (M.Sc.) in Electronics (2011) at Sri Venkateswara University, Tirupati, India. He received PhD (2015) from School of Advanced Sciences at Vellore Institute of Technology (VIT), Tamil Nadu, India. Thesis title: Investigations on Cr, Fe, and Ni-doped In2O3 dilute magnetic semiconductors for room temperature ferromagnetism.

Soon after his Ph.D., he joined as a postdoctoral researcher (in the ImPACT project) in Semiconductor Spintronics Group, Spintronics Research Center at National Institute of Advanced Industrial Science and Technology (AIST), Japan (in Nov 2015). Here he worked for the development of fully epitaxial magnetic tunnel junctions with novel tunnel barrier materials such as Ga2O3, LiF, and ZnO. His work mainly focuses on thin films growth and microfabrication of the epitaxial magnetic tunnel junctions (MTJ) by molecular beam epitaxy and conventional device microfabrication.
Later he moved to National Institute for Material Science (NIMS), Japan (in March 2018) as a postdoc researcher. Here, he worked for Heusler alloy based current-perpendicular-to-plane giant magnetoresistive (CPP-GMR) devices with Co-based Heusler alloys.

Present, at INL he is focusing to develop the nanofabrication of the Magnetic tunnel junctions and Nano-Oscillators.

Selected Publications

  • Hidekazu Saito, Sai Krishna Narayananellore, Norihiro Matsuo, Naoki Doko, Shintaro Kon, Yukiko Yasukawa, Hiroshi Imamura, and Shinji Yuasa
    Tunneling Magnetoresistance and Spin-Dependent Diode Performance in Fully Epitaxial Magnetic Tunnel Junctions With Rocksalt ZnO/MgO Bilayer Tunnel Barrier
    Phys. Rev. Applied 11, 064032 (2019)
  • Toshiki Kanaki, Shin Matsumoto, Sai Krishna Narayananellore, Hidekazu Saito, Yoshihiro Iwasa, Masaaki Tanaka and Shinobu Ohya
    Room-temperature side-gate-induced current modulation in a magnetic tunnel junction with an oxide-semiconductor barrier for vertical spin MOSFET operation
    Applied Physics Express, Vol.-12, 2 (2019)
  • Sai Krishna Narayananellore, Naoki Doko, Norihiro Matsuo, Hidekazu Saito, and Shinji Yuasa
    Fabrication of magnetic tunnel junctions with a single-crystalline LiF tunnel barrier
    Japanese Journal of Applied Physics 57, 04FN04 (2018).
  • Sai Krishna Narayananellore, Naoki Doko, Norihiro Matsuo, Hidekazu Saito, and Shinji Yuasa
    Effect of MgO Underlying Layer on the Growth of GaOx Tunnel Barrier in Epitaxial Fe/GaOx/(MgO)/Fe Magnetic Tunnel Junction Structure
    Sensors, Vol.17, pp.2424, 2017
  • N. Sai Krishna, N. Doko, N. Matsuo, H. Saito, S. Yuasa
    Investigation on the formation process of single-crystalline GaOx barrier in Fe/GaOx/MgO/Fe magnetic tunnel junctions
    Journal of Physics D: Applied Physics, Vol. 50, pp.435001, 2017