Jérôme Borme is a Staff Researcher in the 2D Materials and Devices group.

Jérôme joined INL as a fellow in 2011 and was involved in the start-up of the INL cleanroom in developing nanopatterning processes, particularly for sub-micron magnetic sensor devices.

As a Staff Researcher, he developed a research line on cleanroom fabrication of graphene field-effect transistors with electrolyte gating for applications to biosensing. Through functionalization with immunoglobulins, nucleic acids or aptamers, the devices fabricated at INL have demonstrated record low detection limits of DNA, proteins and small molecules. Graphene devices for radiofrequency transistor applications are also being developed. The current focus is to develop a process that ensures homogeneous fabrication of single-layer CVD graphene devices at the 200 mm scale with an outlook towards integration with CMOS technology.

Other research interests outside of graphene devices include devices made of bidimensional materials for applications in electronic and optoelectronics.

At the facility level, Jérôme Borme is responsible for the electron lithography tool and the X-ray diffraction facility.

Jérôme Borme graduated as Engineer at the École Centrale de Lyon (France) in 2002 and holds a masters in condensed matter physics from Université Claude-Bernard-Lyon-1 and a PhD in Physics from CEA and Université Grenoble-Alpes. Previous experiences are post-doctoral researcher at INESC-MN (Lisbon, Portugal) and visiting scientist at Max-Planck-Institut für Mikrostrukturphysik (Halle (Saale), Germany). As of 2023 he co-authored 76 scientific publications an has an h-factor of 19.