Sabyasachi Saha is currently working as a Research Fellow in the Department of Advanced Electron Microscopy Imaging and Spectroscopy, within the Nanostructured Materials research group at the International Iberian Nanotechnology Laboratory –INL, Portugal under supervision of Dr Leonard Francis. He is working for the project on Two-dimensional Magnetic Semiconductors, which involves characterization of the synthesized materials using the advanced electron microscopy techniques such as, Transmission Electron Microscopy, High Resolution and Aberration-Corrected Microscopy. His research interests include characterization and synthesis of functional materials, such as electronic and photonic materials.
Sabyasachi Saha, did his PhD from the Dept. of Materials Engineering, Indian Institute of Science, Bangalore, India under the supervision of Prof Dipankar Banerjee, Professor, Indian Institute of Science Bangalore, India and Dr K. Muraleedharan, present Director, Central Glass and Ceramic Research Institute, Kolkata, India. His research thesis was on the “TEM Characterization of Microstructural Evolution of GaN grown by MOCVD on c-sapphire”, in which, he carried out characterization of GaN films in their early stages of growth by various TEM and related techniques, and reported the structure of the sub-nm thick nitride layer.
He has a background in Physics and did his Bachelor of Science, from St. Stephens College, University of Delhi. After that, he went on to do his Master of Science in Physics and Master of Technology in Optoelectronics and Optical Communication from the Indian Institute of Technology Delhi, India.
He has also been working as a Research Scientist in the Electron Microscopy Group at Defence Metallurgical Research Laboratory, Hyderabad, India since 2007. In the laboratory, he has been involved with characterization of various metals and alloys, electronic and semiconductor materials and thin films, cross-sectional sample preparation and study using the various TEMs. He has experience in TEM sample preparation, cross-section imaging, and prototyping using the Dual Beam SEM. He has also been instrumental in setting up many new and unique facilities, such as the Integrated Raman AFM system in the country.
- Sabyasachi Saha, Deepak Kumar, Chandan Sharma, Vikash Singh, Samartha Channagiri, and D. V. Sridhara Rao
Microstructural Characterization of GaN Grown on SiC
Microscopy and Microanalysis, 1-11
- YGR Krishna, Sabyasachi Saha, K. Muraleedharan, Srinivasan Raghavan, Dipankar Banerjee
The Nitridation of Sapphire as a Precursor To GaN Growth: Structure and Chemistry
Journal of Crystal Growth & Design, July 2018
- Sabyasachi Saha*, YGR Krishna, K. Muraleedharan, Srinivasan Raghavan, Dipankar Banerjee,
GaN Growth Process by MOCVD Revisited: TEM study of Microstructural Evolution Presented
IEEE International Conference on Emerging Electronics, Dec 2018
- JA Sekhar, AS Mantri, S Yamjala, Sabyasachi Saha, R Balamuralikrishnan, P.Rama Rao
Ancient Metal Mirror Alloy Revisited: Quasicrystalline Nanoparticles Observed
JOM 67 (12), 2976-2983, 2015
- Md. Zafir Alam, Sabyasachi Saha, Bijoy Sarma and Dipak K. Das
Formation of WSi2 Coating on Tungsten and Its Short-Term Cyclic Oxidation Performance in Air
International Journal of Refractory Metals and Hard Materials, 29 (1), 54-63, 2011