LEIT

In nanoelectronic circuits, interconnects use more energy than microprocessors, a situation clearly undesirable for e.g. autonomous Internet of Things applications based on charge and other information tokens. Overcoming this issue and minimising overall power consumption will be of paramount importance as we move towards Beyond-CMOS circuits. A novel approach is required. In LEIT we propose to investigate phonons as information carriers with typical ultralow energies of a fraction of a meV. As quanta of lattice vibrations, the high interactivity of phonons presents two key challenges: phonon-phonon scattering and losses in waveguides caused by interaction with e.g. lattice defects. This issue can be overcome by engineering phonon-phonon scattering in custom-designed phononic crystal-based structures moving towards narrow frequencies and non-interacting phonons at room temperature. These structures will exhibit a unique combination of features to allow phonon filtering, reflection and confinement, as well as transmission from one element (source) to another (modulator and waveguides), all of which will serve to direct and guide the phonon waves. Phonon losses will be minimised, and even eradicated, by using topological phononic waveguides to transmit phonons over micrometre distances. The technological platforms will be made from silicon (Si) and Si-compatible materials, also incorporating transition metal dichalcogenides in order to reach higher frequencies.